Influence of Polarization Effects on the Energy Band of AlGaN/GaN/AlGaN Heterostructures

Chinese Physics Letters

Volumn 21, Issue 4, 2004, Pages 720-722

  Wen, Bo ^a   Jiang, Ruo Lian ^a   Zhou, Jian Jun ^a   Ji, Xiao Li ^a   Liang, Ling Yan ^a   Kong, Yue Chan ^a   Shen, Bo ^a   Zhang, Rong ^a   Zheng, You Dou ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; BAND STRUCTURE; GALLIUM NITRIDE; HALL MOBILITY; HETEROJUNCTIONS; III-V SEMICONDUCTORS; POLARIZATION; TWO DIMENSIONAL ELECTRON GAS;

CARRIER CHARGES; DOPED SAMPLE; ENERGY; ENERGY BAND PROFILES; FREE CARRIERS; HETERO-INTERFACES; POLARIZATION EFFECT; POLARIZATION INDUCED CHARGES; TWO-DIMENSIONAL ELECTRON GASES (2DEG); VARIABLE TEMPERATURE;

TEMPERATURE;

EID: 1942537190     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/21/4/037     Document Type: Article

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