EUV mask blank readiness for 45nm HP 2009 manufacturing

Progress in Biomedical Optics and Imaging - Proceedings of SPIE

Volumn 5751, Issue I, 2005, Pages 178-189

  Seidel, Phil ^a  

^a SEMATECH   (United States)

Author keywords

Defectivity; Flatness; High spatial frequency roughness (HSFR); Low Thermal Expansion Material (LTEM); Mask blank; Multilayer (ML); Polystyrene latex (PSL); Reflectivity; Substrate

Indexed keywords

LITHOGRAPHY; MULTILAYERS; SENSITIVITY ANALYSIS; SUBSTRATES; THERMAL EXPANSION; ULTRAVIOLET RADIATION;

DEFECTIVITY; FLATNESS; HIGH SPATIAL FREQUENCY ROUGHNESS (HSFR); LOW THERMAL EXPANSION MATERIAL (LTEM); MASK BLANK; MULTILAYER (ML);

MASKS;

EID: 24644499956     PISSN: 16057422     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.600544     Document Type: Conference Paper

References (5)

1. International Technology Roadmap for Semiconductors, 2004 (ITRS-04); http://www.itrs.net/Common/2004Update/2004Update.htm (as updated)
2. SEMI P37-1102 Specification for Extreme Ultraviolet Lithography Mask Substrates; Semiconductor Equipment and Materials International); San Jose CA; Nov. 2002.
3. SEMI P38-1103 Specification for Absorbing Film Stacks and Multilayers on Extreme Ultraviolet Lithography Mask Blanks; Semiconductor Equipment and Materials International); San Jose CA: Nov. 2003.
4. st EUVL Symposium, Dallas TX, Oct. 2002.
5. J. Cavelaars et al; Validation of the current status of EUV Mask Blank Defectivity levels; SPIE Microlithography 2004 Vol. 5375 -Metrology, Inspection, and Process Control for Microlithography XVIII