Low-defect EUVL multilayers on standard format mask blanks

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4889, Issue 1, 2002, Pages 374-381

  Folta, James A ^a   Kearney, Patrick A ^a   Larson, Cindy C ^a   Crosley, Michael K ^a   Fisch, Emily ^b   Racette, Kenneth C ^b  

^a LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

Blank; Defect; EUVL; Extreme Ultraviolet Lithography; Mask; Multilayer; Next Generation Lithography; NGL

Indexed keywords

COATINGS; DEFECTS; DEPOSITION; LITHOGRAPHY; MULTILAYERS; SILICON WAFERS;

EXTREME ULTRAVIOLET LITHOGRAPHY (EUVL);

MASKS;

EID: 0038642160     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.467478     Document Type: Conference Paper

References (14)

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