Reactive ion etching of β-FeSi 2 with inductively coupled plasma

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 20-23, 2006, Pages

  Wakayama, Takayuki ^a   Suemasu, Takashi ^b   Kanazawa, Tomomi ^a   Akinaga, Hiroyuki ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

FeSi 2; CH 4 O 2 NH 3 CHF 3 discharge; Reactive ion etching

Indexed keywords

Β-FESI 2; CH 4/O 2/NH 3/CHF 3 DISCHARGE; SI ETCHING;

HETEROJUNCTIONS; INDUCTIVELY COUPLED PLASMA; IRON COMPOUNDS; METHANE; SILICON; THIN FILMS;

REACTIVE ION ETCHING;

EID: 33745431039     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L569     Document Type: Article

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