Layout controlled one-step dry etch and release of MEMS using deep RIE on SOI wafer

Journal of Microelectromechanical Systems

Volumn 15, Issue 3, 2006, Pages 541-547

  Haobing, Liu ^a   Chollet, Franck ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Deep reactive ion etching (DRIE); Microelectromechanical systems (MEMS); Notching; Release; Silicon on insulator (SOI); Stiction

Indexed keywords

REACTIVE ION ETCHING; SEMICONDUCTOR DEVICE STRUCTURES; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; STICTION;

DEEP REACTIVE ION ETCHING (DRIE); NOTCHING;

MICROELECTROMECHANICAL DEVICES;

EID: 33745176252     PISSN: 10577157     EISSN: None     Source Type: Journal    
DOI: 10.1109/JMEMS.2006.876660     Document Type: Article

References (21)

1. C. Marxer and N. F. de Rooij, "Micro-Optical-Mechanical 2 × 2 switch for single-mode fibers based on plasma-etched silicon mirrors and electrostatic actuation," J. Lightw. Technol., vol. 17, no. 1, pp. 2-6, Jan. 1999.
2. H. Toshiyoshi, M. Mita, and H. Fujita, "AMEMS piggyback actuator for hard-disk drives," J. Microelectromech. Syst., vol. 11, no. 6, pp. 648-654, Dec. 2002.
3. O. Gigan, H. Chen, O. Robert, S. Renard, and F. Marty, "Fabrication and characterization of resonant SOI micromechanical silicon sensors based on DRIE micromachining, freestanding release process and silicon direct bonding," Proc. SPIE, vol. 4936, pp. 194-204, 2002.
4. H. B. Liu and F. Chollet, "Optical switch based on moving polymer waveguides and self-latching structure," Int. J. Comput. Eng. Sci., vol. 4, no. 3, pp. 447-450, Sep. 2003.
5. C. H. Mastrangelo and C. H. Hsu, "Mechanical stability and adhesion of microstructure under capillary forces - part I: Basic theory," J. Microelectromech. Syst., vol. 2, no. 1, pp. 33-43, Mar. 1993.
6. M. Madou, Fundamentals of Microfabrication. Boca Raton, FL: CRC Press, 1997, pp. 235-236.
7. J. Y. Kim and C. J. Kim, "Comparative study of various release methods for polysilicon surface micromachining," in Proc IEEE 10th Annu. Int. Workshop on Micro Electro Mechanical Systems: An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots (Cat.CH36021), 1997, pp. 442-447.
8. T. Abe, W. C. Messner, and M. L. Reed, "Effective methods to prevent stiction during post-release-etch processing," in Proc. IEEE Microelectromechanical Systems (MEMS '95), Amsterdam, The Netherlands, 1995, pp. 94-99.
9. G. K. Fedder, J. C. Chang, and R. T. Howe, "Thermal assembly of polysilicon microactuators with narrow-gap electrostatic combdrive," in Proc. Technical Digest: 1992 Solid State Sensor and Actuator Workshop, Hilton Head Island, SC, 1992, pp. 63-68.
10. C. H. Mastrangelo and G. S. Saloca, "A dry-release method based on polymer columns for microstructures fabrication," in Proc. Microelectromechanical Systems (MEMS '93), Ft. Lauderdale, FL, 1993, pp. 77-81.
11. T. A. Lober and R. T. Howe, "Surface micromachining processes for electrostatic microactuator fabrication," in Proc. Technical Digest: 1988 Solid State Sensor and Actuator Workshop, Hilton Head Island, SC, 1988, pp. 59-62.
12. M. R. Houston, R. Maboudian, and R. T. Howe, "Ammonium fluoride anti-Stiction treatments for polysilicon microstructures," in Int. Conf. Solid State Sensors and Actuators, Stockholm, Sweden, 1995, pp. 210-213.
13. G. T. Mulhern, D. S. Soane, and R. T. Howe, "Supercritical carbon dioxide drying of microstructures," in Int. Conf. Solid-State Sensors and Actuators, Yokohama, Japan, 1993, pp. 296-299.
14. P. T. Docker, P. K. Kinnell, and M. C. L. Ward, "Development of the one-step DRIE dry process for unconstrained fabrication of released MEMS devices," J. Micromech. Microeng., vol. 14, no. 7, pp. 941-944, Jul. 2004.
15. G. S. Hwang and K. P. Giapis, "On the origin of the notching effect during etching in uniform high density plasmas," J. Vacuum Sci. Technol. B: Microelect. Process. Phenom., vol. 15, no. 1, pp. 70-87, Jan.-Feb. 1997.
16. M. Chabloz, J. Jiao, Y. Yoshida, T. Matsuura, and K. Tsutsumi, "Method to evade microloading effect in deep reactive ion etching for anodically bonded glass-silicon structures," Proc. IEEE Microelectromechanical Systems (MEMS), pp. 283-287, 2000.
17. K. P. Giapis and G. S. Hwang, "Pattern-dependent charging and the role of electron tunneling," Jpn. J. Appl. Phys. Part 1: Regular Papers, Short Notes, Review Papers, vol. 37, no. 4B, pp. 2281-2290, Apr. 1998.
18. F. Lärmer and A. Schilp, "Method of anisotropically etching silicon," U.S. Patent Specification 5501893, German Patent Specification DE4 241 045.
19. A. A. Ayon, X. Zhang, and R. Khanna, "Ultra deep anisotropic silicon trenches using deep reactive ion etching (DRIE)," in Proc. Solid-State Sensor and ActuatorWorkshop, Hilton Head Island, S.C, 2000, pp. 339-342.
20. P. T. Docker, P. Kinnell, and M. C. L. Ward, "A dry single-step process for the manufacture of released MEMS structures," J. Micromech. Microeng., vol. 13, no. 5, pp. 790-794, Sep. 2003.
21. B. E. Volland, "Profile simulations of gas chopping etching process," Ph.D. dissertation, Institute of Physics, University of Kassel, Kassel, Germany, 2004.