-
1
-
-
0141840550
-
-
Bosch GmbH R B; US Patent 4855017, Germany Patent 4241045CI
-
Bosch GmbH R B 1994 US Patent 4855017, Germany Patent 4241045CI
-
(1994)
-
-
-
2
-
-
0035929081
-
Silicon micromachining using a high density plasma source
-
McAuley S A, Asraf H, Atabo L, Chambers A, Hall S, Hopkins J and Nicolls G 2001 Silicon micromachining using a high density plasma source J. Phys. D: Appl. Phys. 34 2769-74
-
(2001)
J. Phys. D: Appl. Phys.
, vol.34
, pp. 2769-2774
-
-
McAuley, S.A.1
Asraf, H.2
Atabo, L.3
Chambers, A.4
Hall, S.5
Hopkins, J.6
Nicolls, G.7
-
3
-
-
6344227275
-
State of the art deep silicon anisotropic etching on SOI bonded substrates for dielectric isolation and MEMS applications
-
Gormley C, Yallop K, Nevin W A, Bhardwaj J, Asraf H, Huggegett P and Blackstone S 1999 State of the art deep silicon anisotropic etching on SOI bonded substrates for dielectric isolation and MEMS applications Presented at the 5th Symp. on Semiconductor Wafer Bonding Science, Technology and Application (The Fall Meeting of Electrochemical Society, Hawaii, USA, 17-22 Oct.)
-
(1999)
5th Symp. on Semiconductor Wafer Bonding Science, Technology and Application (The Fall Meeting of Electrochemical Society, Hawaii, USA, 17-22 Oct.)
-
-
Gormley, C.1
Yallop, K.2
Nevin, W.A.3
Bhardwaj, J.4
Asraf, H.5
Huggegett, P.6
Blackstone, S.7
-
4
-
-
0035450041
-
The application of secondary effects in high aspect ration dry etching for the fabrication of MEMS
-
Volland B E, Heerlein H, Kostic I and Rangelow I W 2001 The application of secondary effects in high aspect ration dry etching for the fabrication of MEMS Microelectron. Eng. 57-58 641-50
-
(2001)
Microelectron. Eng.
, vol.57-58
, pp. 641-650
-
-
Volland, B.E.1
Heerlein, H.2
Kostic, I.3
Rangelow, I.W.4
-
5
-
-
0035880212
-
Anisotropic silicon trenches 300-500 μm deep employing time multiplexing deep etching (TMDE)
-
Ayon A A, Zhang X and Khanna R 2001 Anisotropic silicon trenches 300-500 μm deep employing time multiplexing deep etching (TMDE) Sensors Actuators A 91 381-5
-
(2001)
Sensors Actuators A
, vol.91
, pp. 381-385
-
-
Ayon, A.A.1
Zhang, X.2
Khanna, R.3
-
6
-
-
0032753082
-
Characterisation of a time multiplexed inductively coupled plasma etcher
-
Ayon A A, Braiff R, Lin C C, Sawin H H and Scmidt M A 1999 Characterisation of a time multiplexed inductively coupled plasma etcher J. Electromech. Soc. 146 339-49
-
(1999)
J. Electromech. Soc.
, vol.146
, pp. 339-349
-
-
Ayon, A.A.1
Braiff, R.2
Lin, C.C.3
Sawin, H.H.4
Scmidt, M.A.5
-
8
-
-
14244251693
-
Characterisation and optimization of deep dry etching for MEMS applications
-
(Malvern, UK: Defence Evaluation and Research Agency)
-
Rickard A and McNie M Characterisation and optimization of deep dry etching for MEMS applications Microsystems and Microengineering (Malvern, UK: Defence Evaluation and Research Agency)
-
Microsystems and Microengineering
-
-
Rickard, A.1
McNie, M.2
-
9
-
-
0141617282
-
-
(POB 3000, FIN-02015 TKK, Finland: Helsinki University of Technology, Microelectronics Centre)
-
Karttunen J, Kiiharmaki J and Franssila S Loading Effects in Deep Silicon Etching, (POB 3000, FIN-02015 TKK, Finland: Helsinki University of Technology, Microelectronics Centre)
-
Loading Effects in Deep Silicon Etching
-
-
Karttunen, J.1
Kiiharmaki, J.2
Franssila, S.3
-
10
-
-
33645340155
-
Pattern shap effects and artifacts in deep silicon etching
-
Kiihamaki J and Franssila S 1999 Pattern shap effects and artifacts in deep silicon etching J. Vac. Sci. Technol A 17 2280-5
-
(1999)
J. Vac. Sci. Technol A
, vol.17
, pp. 2280-2285
-
-
Kiihamaki, J.1
Franssila, S.2
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