A 5 GHz fully integrated ESD-protected low-noise amplifier in 90 nm RF CMOS

ESSCIRC 2004 - Proceedings of the 30th European Solid-State Circuits Conference

Volumn , Issue , 2004, Pages 291-294

  Linten, D ^b   Thijs, S ^a   Natarajan, M I ^a   Wambacq, P ^b   Jeamsaksiri, W ^a   Ramos, J ^a   Mercha, A ^a   Jenei, S ^a   Donnay, S ^a   Decoutere, S ^a  

^a IMEC   (Belgium)

^b VRIJE UNIVERSITEIT BRUSSEL   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

90 MM; ESD; LNA; RF CMOS;

CAPACITANCE; ELECTRIC POTENTIAL; ELECTRONIC EQUIPMENT; GAIN MEASUREMENT; LOGIC DESIGN; NETWORKS (CIRCUITS); NOISE ABATEMENT; RADIO FREQUENCY AMPLIFIERS;

CMOS INTEGRATED CIRCUITS;

EID: 20244373172     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (16)

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