Enhanced room temperature mobilities and reduced parallel conduction in hydrogen passivated Si/SiGe heterostructures

Semiconductor Science and Technology

Volumn 13, Issue 11, 1998, Pages 1317-1321

  Raghavan, M N V ^a   Venkataraman, V ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGENATION; PASSIVATION; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; THERMAL EFFECTS;

PARALLEL CONDUCTION PASSIVATION;

HETEROJUNCTIONS;

EID: 0032205946     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/13/11/016     Document Type: Article

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