Large signal analysis of AlGaN/GaN-HEMT amplifier by coupled physical device-circuit simulation

Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 7, 2006, Pages 1866-1871

  Fujishiro, H I ^a   Narita, S ^a   Tomita, Y ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COUPLED PHYSICAL DEVICES; EMBEDDING CIRCUIT; POWER GAIN;

ALUMINUM NITRIDE; AMPLIFIERS (ELECTRONIC); BACKWARD WAVE TUBES; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; EMBEDDED SYSTEMS; GAIN CONTROL; GALLIUM NITRIDE; IMPACT IONIZATION; MONTE CARLO METHODS; NETWORKS (CIRCUITS); WAVEFORM ANALYSIS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33745037518     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200565142     Document Type: Article

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