Determination of small-signal parameters and noise figures of MESFET's by physics-based circuit simulator employing Monte Carlo technique

IEICE Transactions on Electronics

Volumn E86-C, Issue 8, 2003, Pages 1472-1479

  Ishii, Takao ^a   Nakayama, Masahiro ^a   Takei, Teruyuki ^a   Fujishiro, Hiroki I ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Heat generation; MESFET; Monte Carlo simulation; Noise figure; Small signal parameter

Indexed keywords

COMPUTER SIMULATION; ELECTRIC FREQUENCY MEASUREMENT; EQUIVALENT CIRCUITS; ESTIMATION; GATES (TRANSISTOR); MONTE CARLO METHODS; PERFORMANCE; SCATTERING PARAMETERS; SEMICONDUCTING GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE; TRANSCONDUCTANCE;

GATE-SOURCE CAPACITANCE; MONTE CARLO PARTICLE TECHNIQUE; NOISE FIGURE; PHYSICS-BASED CIRCUIT SIMULATOR; SMALL-SIGNAL PARAMETERS; Y-PARAMETERS;

MESFET DEVICES;

EID: 0142086709     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (19)

1. Y. Arai, M. Sato, H.T. Yamada, T. Hamada, K. Nagai, and H.I. Fujishiro, "60-GHz flip-chip assembled MIC design considering chip-substrate effect," IEEE Trans. Microw. Theory Tech., vol.12, pp. 2261-2266, 1997.
2. Z. Wen, T. Katayanagi, Y. Arai, H.I. Fujishiro, and S. Seki, "A 5.8 GHz transmitter MMIC for electronic toll collection system," IEEE GaAs IC Symp. Tech. Dig., pp. 173-176, 1998.
3. E.C. Low, H. Nakamura, and H.I. Fujishiro, "A plastic package GaAs MESFET 5.8 GHz receiver front-end with on-chip matching for ETC system," IEEE Trans. Microw. Theory Tech., vol.48, no.2, pp.209-213, 2000.
4. H.I. Fujishiro, Y. Ogawa, T. Hamada, and T. Kimura, "SSB MMIC mixer with subharmonic LO and CPW circuits for 38 GHz band applications," IEE Electron. Lett., vol.37, no.7, pp. 1-2, 2001.
5. K. Tomizawa, Numerical Simulation of Submicron Semiconductor Devices, Artech House, London, 1993.
6. C. Jacoboni and P. Lugli, The Monte Carlo Method for Semiconductor Device Simulation, Springer-Verlag, Wien, 1989.
7. C. Moglestue, Monte Carlo Simulation of Semiconductor Devices, Chapman & Hall, London, 1993.
8. T. Gonzalez, J.E. Velazquez, P.M. Gutierrez, and D. Pardo, "Five-valley model for the study of electron properties at high electric fields in GaAs," Semicond. Sci. Technol., vol.6, pp.862-871, 1991.
9. M.B. Patil and U. Ravaioli, "Transient simulation of semiconductor devices using the Monte-Carlo method," Solid-State Electron., vol.34, no.10, pp. 1029-1034, 1991.
10. V. Gružinskis, S. Keršulis, and A. Reklaitis, "An efficient Monte Carlo particle technique for two-dimensional transistor modeling," Semicond. Sci. Technol., vol.6, pp. 602-606, 1991.
11. O. Madelung, ed., "Gallium arsenide (GaAs)," in Semiconductors-Basic-Data, Springer-Verlag, Berlin, 1972.
12. S.E. Laux, "Techniques for small-signal analysis of semiconductor devices," IEEE Trans. Electron Devices, vol.ED-32, no.10, pp.2025-2037, 1985.
13. T. González and D. Pardo, "Monte Carlo determination of the intrinsic small-signal equivalent circuit of MESFET's," IEEE Trans. Electron Devices, vol.42, no.4, pp. 605-611, 1995.
14. M. Berroth and R. Bosch, "Broad-band determination of the FET small-signal equivalent circuit," IEEE Trans. Microw. Theory Tech., vol.38, no.7, pp.891-895, 1990.
15. T. Gonzalez, D. Pardo, and L. Reggiani, "Monte Carlo analysis of the behavior and spatial origin of electronic noise in GaAs MESFET's," IEEE Trans. Electron Devices, vol.42, no.5, pp.991-997, 1995.
16. F. Bonani and G. Ghione, Noise in Semiconductor Devices Modeling and Simulation, Springer-Verlag, Berlin, 2001.
17. L. Varani, L. Reggiani, T. Kuhn, T. Ganzález, and D. Pardo, "Microscopic simulation of electronic noise in semiconductor materials and devices," IEEE Trans. Electron Devices, vol.41, no.11, pp.1916-1925, 1994.
18. A. Cappy, A. Vanoverschelde, M. Schortgen, C. Versnaeyen, and G. Salmer, "Noise modeling in submicrometer-gate two-dimensional electron-gas field-effect transistors," IEEE Trans. Electron Devices, vol.ED-32, no.12, pp. 2787-2795, 1985.
19. H.I. Fujishiro and T. Ishii, "Determination of small-signal parameters and noise figures of MESFET's by physics-based circuit simulator employing Monte Carlo technique," Proc. 2002 Asia Pacific Microwave Conf., vol.1, pp. 338-341, Kyoto, Japan, 2002.