High-power edge emitting red laser diode optimization using optical simulation

Optical and Quantum Electronics

Volumn 31, Issue 9, 1999, Pages 1009-1030

  Dumitrescu, M ^a   Toivonen, M ^a   Savolainen, P ^a   Orsila, S ^a   Pessa, M ^a  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; HIGH POWER LASERS; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; OPTIMIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

ALL-SOLID-SOURCE MOLECULAR BEAM EPITAXY (MBE); HIGH-POWER EDGE EMITTING RED LASER DIODES;

QUANTUM WELL LASERS;

EID: 0032690675     PISSN: 03068919     EISSN: None     Source Type: Journal    
DOI: 10.1023/a:1007076928803     Document Type: Article

References (22)

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