Characterization and modelling of a two terminal visible/infrared photodetector based on amorphous/crystalline silicon heterostructure

Sensors and Actuators, A: Physical

Volumn 88, Issue 2, 2001, Pages 139-145

  Caputo, D ^a   De Cesare, G ^a   Tucci, M ^a  

^a Department of Electronic Engineering ^*  (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CARRIER MOBILITY; CRYSTALLINE MATERIALS; DIFFUSION IN SOLIDS; ELECTRON ABSORPTION; HETEROJUNCTIONS; MULTILAYERS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE; SILICON WAFERS;

TRANSIENT RESPONSE;

INFRARED DETECTORS;

EID: 0035251391     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(00)00509-4     Document Type: Article

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