Surface passivation of InGaP/InGaAs/GaAs pseudomorphic HEMTs with ultrathin GaS film

IEEE Transactions on Electron Devices

Volumn 47, Issue 12, 2000, Pages 2284-2289

  Okamoto, Naoya ^a   Hara, Naoki ^a   Tanaka, Hitoshi ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

HEMT; Impact ionization; Interface state; Surface passivation

Indexed keywords

EID: 0005374513     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.887009     Document Type: Article

References (19)

1. Y. C. Wang et al., "Ga2O3(Gd2O3)/GaAs power MOSFETs," Electron. Lett., vol. 35, pp. 667-669, 1999.
2. D. G. Park et al, "Si3N4/Si/In0.05Ga0.95As/n-GaAs metal-insulatorsemiconductor devices," J. Appl. Phys., vol. 81, pp. 516-523, 1997.
3. P. P. Jenkins, A. N. Maclnnes, M. Tabib-Azar, and A. R. Barron, "Gallium arsenide transistors: realization through a molecularly designed insulator," Science, vol. 263, pp. 1751-1753, 1994.
4. G. W. Charache, S. Akram, E. W. Maby, and I. B. Bhat, "Surface passivation of GaAs MESFET's," IEEE Trans. Electron Devices, vol. 44, pp. 1837-1842, 1997.
5. T. Sugino, S. Nozu, and S. Nakajima, "Phosphization of GaAs by a remote phosphine plasma process and its application to surface passivation of GaAs metal-semiconductor field-effect transistors," Appl. Phys. Lett., vol. 74, pp. 2999-3001, 1999.
6. N. Okamoto, N. Hara, M. Yokoyama, and H. Tanaka, "GaAs Surface passivation with MBE Grown GaS Thin Film," in Proc. 24th. Int. Symp. Compound Semiconductors, 1997, pp. 139-142.
7. N. Okamoto and H. Tanaka, "GaAs durface passivation with GaS thin film grown by molecular beam epitaxy," Jpn. J. Appl. Phys., vol. 37, pp. 484-485, 1998.
8. N. Okamoto, T. Takahashi, H. Tanaka, and M. Takikawa, "Near-ohmic contact of n-GaAs with GaS/GaAs quasi-metal-insulator-semiconductor structure," Jpn. J. Appl. Phys., vol. 37, pp. 3248-3251, 1998.
9. N. Okamoto, T. Takahashi, and H. Tanaka, "Nonalloyed ohmic contact to n-GaAs with GaS/GaAs quasi-metal-insulator-semiconductor structure," A/J/JJ. Phys. Lett., vol. 73, pp. 794-796, 1998.
10. N. Okamoto and H. Tanaka, "Characterization of molecular beam epitaxy grown GaS film for GaAs surface passivation," Mater. Sci.. Semiconduct. Process., vol. 2, pp. 13-18, 1999.
11. _, "Etching of GaAs/AlGaAs by bisdimethylaminochloroarsine," J. Vac. Sci.. Technol, vol. A16, pp. 96-99, 1998.
12. J.-F. Fan, H. Oigawa, and Y. Nannichi, "Metal-dependent Schottky barrier height with the (NH4)SX-treated GaAs," Jpn. J. Appl. Phys., vol. 27, p. L2125, 1988.
13. H. Mizuta, K. Yamaguchi, and S. Takahashi, "Surface Potential effect on gate-drain avalanche breakdown in GaAs MESFET's," IEEE Trans. Electron Devices, vol. ED-34, pp. 2027-2033, 1987.
14. G. E. Bulman, V. M. Robbins, and G. E. Stillman, "The determination of impact ionization coefficients in (100) gallium arsenide using avalanche noise and photocurrent multiplication measurements," IEEE Trans. Electron Devices, vol. ED-32, pp. 2454-2466, 1985.
15. R. Ghin et al., "Avalanche multiplication and breakdown in GaO.52InO.48P diodes," IEEE Trans. Electron Devices, vol. 45, pp. 2096-2101, 1998.
16. W. E. Spicer et al., "New and unified model for Schottky barrier and III-V insulator interface states formation," J. Vac. Sci.. Technol., vol. 16, pp. 1422-1433, 1979.
17. T. E. Kazior, J. Lagowski, and H. C. Gatos, "The electrical behavior of GaAs-insulator interfaces: A discrete energy interface state model," J. Appl. Phys., vol. 54, pp. 2533-2539, 1983.
18. H. Hasegawa and H. Ohno, "Unified disorder induced gap state model for insulator-semiconductor and metal-semiconductor interfaces," J. Vac. Sci.. Technol. B, vol. 4, pp. 1130-1138, 1986.
19. M. D. Pashley, K. W. Haberern, R. M. Feenstra, and P. D. Kirchner, "Different Fermi-level pinning behavior on n- and p-type GaAs(001)," Phys. Rev. B, vol. 48, pp. 4612-4615, 1993.