X-ray photoelectron spectroscopy analysis of oxygen annealed radio frequency sputter deposited SiCN thin films

Journal of the Electrochemical Society

Volumn 153, Issue 7, 2006, Pages

  Todi, R M ^a,b,c   Warren, A P ^b   Sundaram, K B ^a,b,c   Coffey, K R ^b  

^a University of Central Florida   (United States)

^b UNIVERSITY OF CENTRAL FLORIDA   (United States)

^c ELECTROCHEMICAL SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURE; OXIDATION KINETICS; RADIO FREQUENCY SPUTTER DEPOSITION; SILICON CARBIDE NITRIDE;

ANNEALING; OXIDATION; OXYGEN; REACTION KINETICS; SILICON COMPOUNDS; SINTERING; SPUTTER DEPOSITION; X RAY PHOTOELECTRON SPECTROSCOPY;

THIN FILMS;

EID: 33744785712     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2198127     Document Type: Article

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