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Journal of Physics: Conference Series
Volumn 34, Issue 1, 2006, Pages 506-510
UV curing imprint lithography for micro-structure in MEMS manufacturing
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Indexed keywords

EID: 33744549153     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/34/1/083     Document Type: Article
Times cited : (4)
References (11)
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    • Kim, Y.S.1    Suh, K.Y.2    Lee, H.H.3
  • 4
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    • Using an elastomeric phase mask for sub-100 nm photolithography in the optical near field
    • 10.1063/1.118988 0003-6951
    • John A Rogers, Kateri E Paul, Rebecca J Jackman and George M Whitesides 1997 Using an elastomeric phase mask for sub-100 nm photolithography in the optical near field Appl. Phys. Lett. 70 2658-2660
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  • 6
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    • 10.1116/1.589514 0734-211X B
    • Zhang S, J E Franke, T M Niemczyk, D M Haaland, J N Cox and I Banerjee 1997 Testing of a rapid fault detection model for quality control: Borophosphosilicate glass thin films monitored by infrared absorption spectroscopy J. Vac. Sci. Technol. B 15 955-960
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    • Chou S Y and P R Krauss 1997 Imprint lithography with sub-10nm feature size and high throughput Microelectron. Eng. 35 237-240
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    • Double-dot charge transport in SI singleelectron/hole transistors
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    • Rokhinson L P, Guo L J, Chou S Y, Tsui D C 2000 Double-dot charge transport in SI singleelectron/hole transistors Appl Phys Lett 76 (12) 1591-1593
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.