Excitation mechanisms and localization sites of erbium-doped porous silicon

Applied Surface Science

Volumn 252, Issue 16, 2006, Pages 5808-5813

  Najar, A ^a   Elhouichet, H ^a   Lorrain, N ^b   Oueslati, M ^a  

^a FACULTÉ DES SCIENCES DE TUNIS   (Tunisia)

^b UNIVERSITÉ DE RENNES 1   (France)

Author keywords

Cross section; Erbium; Excitation mechanisms; Porous silicon

Indexed keywords

BACKSCATTERING; DEFECTS; DOPING (ADDITIVES); ELECTROCHEMISTRY; ERBIUM; NANOSTRUCTURED MATERIALS; SPECTROSCOPIC ANALYSIS;

CROSS-SECTION; EXCITATION MECHANISMS; PUMP INTENSITY; RUTHERFORD BACKSCATTERING SPECTROSCOPY (RBS);

POROUS SILICON;

EID: 33744538086     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.07.071     Document Type: Article

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