Photoluminescence mechanisms of Tb 3+-doped porous GaP

Physica Status Solidi (A) Applications and Materials Science

Volumn 202, Issue 8, 2005, Pages 1513-1517

  Elhouichet, H ^a   Oueslati, M ^a   Lorrain, N ^b   Langa, S ^c,d   Tiginyanu, I M ^c   Foll H ^d  

^a FACULTÉ DES SCIENCES DE TUNIS   (Tunisia)

^b UNIVERSITÉ DE RENNES 1   (France)

^c INSTITUTE OF APPLIED PHYSICS   (Moldova)

^d UNIVERSITY OF KIEL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BAND; HIGH-TEMPERATURE ANNEALING; TERBIUM IONS; THERMALIZATION;

ANNEALING; ENERGY DISPERSIVE SPECTROSCOPY; EXCITONS; GALLIUM COMPOUNDS; PHOTOLUMINESCENCE; POROSITY; SCANNING ELECTRON MICROSCOPY; TEMPERATURE DISTRIBUTION;

TERBIUM COMPOUNDS;

EID: 25444478882     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200461164     Document Type: Conference Paper

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