Time-resolved photoluminescence spectroscopy of Er-implanted porous silicon

Journal of Luminescence

Volumn 71, Issue 1, 1997, Pages 13-20

  Wu, X ^a   White, R ^a   Hommerich U ^a   Namavar, F ^b   Cremins Costa, A M ^b  

^a HAMPTON UNIVERSITY   (United States)

^b SPIRE CORPORATION   (United States)

Author keywords

Erbium; Photoluminescence; Porous silicon

Indexed keywords

BAND STRUCTURE; CHARGE CARRIERS; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; ELECTRONS; ENERGY TRANSFER; ERBIUM; ION IMPLANTATION; POROUS SILICON; QUENCHING; SPECTROSCOPY; TEMPERATURE;

CONDUCTION BAND; PHOTOGENERATED CARRIERS; THERMALIZATION; TIME RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY;

PHOTOLUMINESCENCE;

EID: 0030736696     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(96)00098-1     Document Type: Article

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