Site of the Er3+ optical centers of the 1.54 μm room-temperature emission in Er-doped porous silicon and the excitation mechanism

Journal of Luminescence

Volumn 87, Issue , 2000, Pages 319-322

  Wang, Wei ^a   Isshiki, Hideo ^a   Yugo, Shigemi ^a   Saito, Riichiro ^a   Kimura, Tadamasa ^a  

^a UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRON TRANSITIONS; ERBIUM; FLUORESCENCE; ION IMPLANTATION; LUMINESCENCE OF INORGANIC SOLIDS; NANOSTRUCTURED MATERIALS; QUENCHING;

EXCITATION MECHANISM; OPTICAL CENTERS;

POROUS SILICON;

EID: 0033738087     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(99)00342-7     Document Type: Article

References (12)

1. Ennen H., Schneider J., Pomrenke G., Axmann A. Appl. Phys. Lett. 43:1983;943.
2. Ennen H., Pomrenke G., Axmann A., Eisele K., Haydl W., Schneider J. Appl. Phys. Lett. 46:1985;381.
3. Michel J., Beneton J.L., Ferrante R.F., Jacobson D.C., Eaglesham D.J., Fitzgerald E.A., Xie Y.-H., Poate J.M., Kimmerling L.C. J. Appl. Phys. 70:1991;2672.
4. Franzó G., Priolo F., Coffa S., Polman A., Canera A. Appl. Phys. Lett. 64:1994;2235.
5. Taguchi A., Nakagome H., Takahei K. J. Appl. Phys. 70:1991;5604.
6. Taguchi A., Takahei K. J. Appl. Phys. 83:1998;2800.
7. Favennec P.N., L'Haridon H., Moutonnet D., Salvi M., Gauneau M. Jpn. J. Appl. Phys. 29:1990;L521.
8. Kimura T., Yokoi A., Horiguchi H., Saito R., Ikoma T., Sato A. Appl. Phys. Lett. 65:1994;983.
9. Shin J.H., van den Hoven G.N., Polman A. Appl. Phys. Lett. 66:1995;2379.
10. Kimura T., Yokoi A., Nishida Y., Saito R., Yugo S., Ikoma T. Appl. Phys. Lett. 67:1995;2687.
11. X. Zhao, S. Komuro, S. Maruyama, H. Isshiki, Y. Aoyagi, T. Sugano, Rare Earth Doped Semiconductors II Symposium, 1996, p. 143.
12. Nazyrov D.E., Kulikov G.S., Malkovich R.Sh. Fiz. Tekh. Poluprovodn. (Russia). 25:1991;1653.