Photoemission studies of very thin (<10 nm) silicon oxynitride (SiO xNy) layers formed by PECVD

Journal of Alloys and Compounds

Volumn 382, Issue 1-2, 2004, Pages 228-233

  Hoffmann, P ^a,c   Schmeisser D ^a   Beck, R B ^b   Cuch, M ^b   Giedz, M ^b   Jakubowski, A ^b  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^b WARSAW UNIVERSITY OF TECHNOLOGY   (Poland)

^c LS Angewandte Physik II   (Germany)

Author keywords

Photoelectron spectroscopies; Semiconductors; Synchrotron radiation; Thin films; Vapour deposition

Indexed keywords

OPTICAL RESOLVING POWER; PERMITTIVITY; PHOTOEMISSION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR MATERIALS; SILICON; SYNCHROTRON RADIATION; VAPOR DEPOSITION;

ATOMIC LAYER DEPOSITION (ALD); EXCITATION ENERGY; PHOTOELECTRON SPECTROSCOPIES;

THIN FILMS;

EID: 8344270960     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2004.05.032     Document Type: Conference Paper

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