A new polycrystalline silicon TFT with a single grain boundary in the channel

IEEE Electron Device Letters

Volumn 22, Issue 9, 2001, Pages 429-431

  Jeon, J H ^a   Lee, M C ^a   Park, K C ^a   Han, M K ^a  

^a Seoul National University   (South Korea)

Author keywords

Excimer laser annealing; Grain boundary; Lateral grain growth; Poly Si TFT

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; EXCIMER LASERS; GRAIN BOUNDARIES; GRAIN GROWTH; POLYSILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; TRANSMISSION ELECTRON MICROSCOPY;

EXCIMER LASER ANNEALING; LATERAL GRAIN GROWTH;

THIN FILM TRANSISTORS;

EID: 0035447817     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.944329     Document Type: Article

References (9)

1. XeCl excimer laser annealing used in the fabrication of poly-Si TFT's
2. Low temperature amorphous silicon channel material for polysilicon thin film transistors
3. High performance low-temperature processed polysilicon TFT's fabricated by excimer laser crystallization with recessed-channel structure
4. Effect of hydrogenation of the leakage currents of laser-annealed polysilicon TFT's
5. Lateral growth control in excimer laser crystallized polysilicon
6. 2
7. Low-temperature single-crystal Si TFT's fabricated on Si films processed via sequential lateral solidification
8. Phase transformation mechanism involved in excimer laser crystallization of amorphous silicon films
9. Excimer-laser-annealed poly-Si thin-film transistors