Reliability of low temperature poly-Si TFT employing counter-doped lateral body terminal

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 217-220

  Yoo, J S ^a   Kim, C H ^a   Lee, M C ^a   Han, M K ^a   Kim, H J ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; ELECTRIC POTENTIAL; EXCIMER LASERS; IMPACT IONIZATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYSILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

EXCIMER LASER ANNEALING (ELA); LATERAL BODY TERMINAL (LBT) STRUCTURES;

THIN FILM TRANSISTORS;

EID: 0034452627     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2000.904296     Document Type: Conference Paper

References (11)