Investigation of grain boundary control in the drain junction on laser-crystalized poly-Si thin film transistors

IEEE Electron Device Letters

Volumn 24, Issue 7, 2003, Pages 457-459

  Chen, Tien Fu ^a   Yeh, Ching Fa ^a   Lou, Jen Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Drain junction; Electrical characteristics; Grain boundaries; Kink effect; Laser crystallized poly Si; Reliability

Indexed keywords

AMORPHOUS SILICON; CRYSTALLIZATION; ELECTRIC CURRENTS; GRAIN BOUNDARIES; HOT CARRIERS; POLYSILICON; RELIABILITY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; THRESHOLD VOLTAGE;

DRAIN JUNCTION; GRAIN BOUNDARY CONTROL; KINK EFFECT; LASER CRYSTALLIZED POLYSILICON;

THIN FILM TRANSISTORS;

EID: 0042388014     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.814007     Document Type: Letter

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