Fabrication and characteristics of GaN-based microcavity light-emitting diodes with high reflectivity AIN/GaN distributed bragg reflectors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 B, 2006, Pages 3446-3448

  Peng, Yu Chun ^a   Kao, Chih Chiang ^a   Huang, Hung Wen ^a   Chu, Jung Tang ^a   Lu, Tien Chang ^a   Kuo, Hao Chung ^a   Wang, Shing Chung ^a   Yu, Chang Chin ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b Highlink Corporation   (Taiwan)

Author keywords

GaN; Light emitting diode; MCLED; Microcavity

Indexed keywords

ALUMINUM NITRIDE; BRAGG CELLS; CURRENT DENSITY; DIELECTRIC MATERIALS; ELECTROLUMINESCENCE; GALLIUM NITRIDE; REFLECTION;

DIELECTRIC MIRRORS; EMISSION PEAK WAVELENGTH; MICROCAVITY; MICROCAVITY LIGHT-EMITTING DIODE (MCLED);

LIGHT EMITTING DIODES;

EID: 33646939008     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.3446     Document Type: Article

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