N -type AlN layer by Si ion implantation

Applied Physics Letters

Volumn 88, Issue 20, 2006, Pages

  Kanechika, Masakazu ^a   Kachi, Tetsu ^a  

^a Rd Management Section   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; INTERFACIAL ENERGY; ION IMPLANTATION; NITROGEN; SAPPHIRE;

ACTIVATION ANNEALING; HALL MOBILITY; SAPPHIRE SUBSTRATES;

SILICON;

EID: 33646883333     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2204656     Document Type: Article

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