Enhanced electron field emission from oriented AlN films

Journal of Applied Physics

Volumn 99, Issue 9, 2006, Pages

  Yue, S L ^a   Shi, C Y ^a   Li, J J ^a   Gu, C Z ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CURRENT DENSITY; DEPOSITION; ELECTRIC FIELD EFFECTS; ELECTRON EMISSION; LINEAR EQUATIONS; MAGNETRON SPUTTERING; PHOTOLUMINESCENCE; THRESHOLD ELEMENTS; TUNGSTEN;

ALN FILMS; ELECTRON FIELD EMISSIONS; EMISSION THRESHOLDS; VERTICALLY ORIENTED GRAINS;

THIN FILMS;

EID: 33646880489     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2195023     Document Type: Article

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