Stress characterization of Si by near-field Raman microscope using resonant scattering

Applied Spectroscopy

Volumn 60, Issue 5, 2006, Pages 479-482

  Yoshikawa, Masanobu ^a   Murakami, Masataka ^a  

^a TORAY RESEARCH CENTER INC   (Japan)

Author keywords

Nanometer; Near field; Raman spectroscopy; Resonant Raman scattering; Si; Stress

Indexed keywords

CANTILEVER BEAMS; COMPRESSIVE STRESS; RAMAN SCATTERING; RESONANCE; SILICA; TENSILE STRESS;

NANOMETER; NEAR FIELD; RESONANT RAMAN SCATTERING;

SILICON;

SILICON;

ARTICLE; CHEMISTRY; CONFOCAL MICROSCOPY; ELASTICITY; LIGHT; MATERIALS TESTING; MECHANICAL STRESS; METHODOLOGY; MICROSCOPY; RADIATION SCATTERING; RAMAN SPECTROMETRY;

ELASTICITY; LIGHT; MATERIALS TESTING; MICROSCOPY, CONFOCAL; MICROSCOPY, ULTRAVIOLET; SCATTERING, RADIATION; SILICON; SPECTRUM ANALYSIS, RAMAN; STRESS, MECHANICAL;

EID: 33646877285     PISSN: 00037028     EISSN: None     Source Type: Journal    
DOI: 10.1366/000370206777412130     Document Type: Article

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