Characterization of Si nano-polycrystalline films at the nanometer level using resonant Raman scattering

Journal of Applied Physics

Volumn 98, Issue 6, 2005, Pages

  Yoshikawa, M ^a   Murakami, M ^a   Matsuda, K ^a   Matsunobe, T ^a   Sugie, S ^a   Okada, K ^a   Ishida, H ^a  

^a TORAY RESEARCH CENTER INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

NANO-POLYCRYSTALLINE FILMS; RAMAN PEAK; RESONANT RAMAN SCATTERING; X-RAY MEASUREMENT;

COMPRESSIVE STRESS; MATHEMATICAL MODELS; NANOSTRUCTURED MATERIALS; PHONONS; RAMAN SCATTERING; SILICA; THICKNESS MEASUREMENT; THIN FILMS;

POLYSILICON;

EID: 26244455113     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2060954     Document Type: Article

References (19)

1. S. Kambayashi, T. Hamasaki, T. Nakakubo, M. Watanabe, and H. Tango, Extended Abstracts of the 18th Conference on the SSDM, Tokyo, 1986 (unpublished), p. 415.
2. I. De Wolf, J. Vanhellemont, A. Romano-Rodriguez, H. Norstöm, and H. E. Maes, J. Appl. Phys. 71, 898 (1992).
3. I. De Wolf, H. Norstöm, and H. E. Maes, J. Appl. Phys. 74, 4490 (1993).
4. Y. Katsumata, I. Katakabe, N. Itoh, E. Tsukioka, C. Yoshino, and H. Iwai, Bipolar/C-MOS Circuit and Technology Meeting (1991), p. 271.
5. S. Nadahara, S. Kambayashi, M. Watanabe, and T. Nakakubo, Extended Abstracts of the 19th Conference on the SSDM, Tokyo, 1987 (unpublished), p. 327.
6. M. Yoshikawa, M. Maegawa, G. Katagiri, and H. Ishida, J. Appl. Phys. 78, 941 (1995).
7. M. Yoshikawa and N. Nagai, in Handbook of Vibrational Spectroscopy, edited by, J. M. Chalmers, and, P. R. Griffiths, (Wiley, Chichester, 2002), p. 2593.
8. J. B. Renucci, R. N. Tyte, and M. Cardona, Phys. Rev. B 11, 3885 (1975).
9. M. Holts, W. M. Duncan, S. Zollner, and R. Lie, J. Appl. Phys. 88, 2523 (2000).
10. H. Xia, Y. L. He, L. C. Wang, W. Zhang, X. N. Liu, X. K. Zhang, D. Feng, and H. E. Jackson, J. Appl. Phys. 78, 6705 (1995).
11. Handbook of Vibrational Spectroscopy, edited by, E. D. Palik, (Academic, Tokyo, 1985), p. 547.
12. H. Richter, Z. P. Wang, and L. Ley, Solid State Commun. 39, 625 (1981).
13. M. Fauchet and I. H. Campbell, Crit. Rev. Solid State Mater. Sci. 14, S79 (1988).
14. M. Yoshikawa, Y. Mori, H. Obata, M. Maegawa, G. Katagiri, H. Ishida, and A. Ishitani, Appl. Phys. Lett. 67, 694 (1995).
15. P. Mishra and K. P. Jain, Phys. Rev. B 64, 073304 (2001).
16. F. Cerdeira, C. J. Buchenauer, F. H. Pollak, and M. Cardona, Phys. Rev. B 5, 580 (1972).
17. E. Anastassakis, Physical Problems in Microelectronics, Proceedings of the 4th International School ISPPM, Varan, Bulgaria, 12-18 May 1985, edited by, J. Kassavod, (unpublished), p. 128.
18. V. Paillard, P. Puech, M. A. Laguna, P. Temple-Boyer, B. Caussat, J. P. Couderc, and B. de Mauduit, Appl. Phys. Lett. 73, 1718 (1998).
19. Introduction to Solid State Physics, edited by, C. Kittel, (Wiley, Chichester, 1996), p. 83.