SCOPUS 정보 검색 플랫폼

Volumn 6121, Issue , 2006, Pages

Growth of GaN on patterned GaN/sapphire substrates with various metallic masks by high pressure solution method

Author keywords

Gallium nitride; High pressure growth from solution; Lateral overgrowth; Seeded growth

Indexed keywords

CRYSTAL GROWTH; IRIDIUM; MASKS; SAPPHIRE; SUBSTRATES; TUNGSTEN;

HIGH-PRESSURE GROWTH FROM SOLUTION; LATERAL OVERGROWTH; SEEDED GROWTH;

GALLIUM NITRIDE;

EID: 33646789830 PISSN: 0277786X EISSN: None Source Type: Conference Proceeding
DOI: 10.1117/12.645066 Document Type: Conference Paper

Times cited : (2)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.