Growth of bulk GaN on GaN/sapphire templates by a high N2 pressure method

Physica Status Solidi (B) Basic Research

Volumn 241, Issue 12, 2004, Pages 2685-2688

  Bockowski M ^a   Grzegory, I ^a   Lucznik B ^a   Krukowski, S ^a   Wroblewski M ^a   Kwiatkowski, P ^a   Jasik, K ^a   Wawer, W ^a   Borysiuk, J ^a   Kamler, G ^a   Porowski, S ^a  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; DISLOCATIONS (CRYSTALS); HIGH PRESSURE ENGINEERING; NITROGEN; PRESSURE CONTROL; SAPPHIRE; SINGLE CRYSTALS; SUBSTRATES;

BULH GALLIUM NITRIDE; HIGH NITROGEN PRESSURE METHOD; HILLOCK CENTER; SAPPHIRE TEMPLATES;

GALLIUM NITRIDE;

EID: 7444269487     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssb.200404979     Document Type: Conference Paper

References (4)

1. I. Grzegory, J. Phys. 13, 6875S (2001).
2. M. Boćkowski et al., J. Cryst. Growth 246, 194 (2002).
3. See, e.g., H. M. Kim et al., Mater. Lett. 47, 276 (2001).
4. E. Bauser et al., J. Cryst. Growth 69, 561 (1984).