Novel growth technique for the reducing dislocation density in GaN on sapphire substrate

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2063-2066

  Kunisato, T ^a   Nomura, Y ^a   Ohbo, H ^a   Kano, T ^a   Hayashi, N ^a   Hata, M ^a   Yamaguchi, T ^a   Shono, M ^a   Sawada, M ^a   Ibaraki, A ^a  

^a SANYO ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; DEVICE STRUCTURES; DISLOCATION DENSITIES; LOW TEMPERATURE BUFFER LAYERS; LOW-DISLOCATION DENSITY; SAPPHIRE SUBSTRATES; THREADING DISLOCATION; THREADING DISLOCATION DENSITIES;

EPITAXIAL GROWTH; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; SAPPHIRE; SILICON NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

SINGLE CRYSTALS;

EID: 33646781812     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303435     Document Type: Conference Paper

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