A new method to extract carrier velocity in sub-0.1-μm MOSFETs using RF measurements

IEEE Transactions on Nanotechnology

Volumn 5, Issue 3, 2006, Pages 163-166

  Lee, Seonghearn ^a,b  

^a Hankuk University of Foreign Studies ^*

^b Hankuk University of Foreign Studies   (South Korea)

Author keywords

Carrier velocity; Device modeling; MOSFET; Parameter estimation; S parameters; Sub 0.1 m

Indexed keywords

CAPACITANCE; CARRIER COMMUNICATION; ELECTRON VELOCITY ANALYZERS; PARAMETER ESTIMATION; SCATTERING PARAMETERS; TRANSCONDUCTANCE; VELOCITY MEASUREMENT;

BULK SATURATION VELOCITY; CARRIER VELOCITY; CHANNEL CAPACITANCE; DEVICE MODELING; MOSFET; RF MEASUREMENTS; SATURATION REGION;

MOSFET DEVICES;

EID: 33646727419     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2006.869944     Document Type: Conference Paper

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