Direct extraction of small-signal model parameters for nanoscale MOSFETs

IMFEDK 2004 - International Meeting for Future of Electron Devices, Kansai

Volumn , Issue , 2004, Pages 111-112

  Lee, Seonghearn ^a  

^a Hankuk University of Foreign Studies   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EXTRACTION; HETEROJUNCTION BIPOLAR TRANSISTORS; INDUCTANCE; NANOTECHNOLOGY; PARAMETER EXTRACTION; SCATTERING PARAMETERS;

DIRECT EXTRACTION; EXTRACTION METHOD; HIGH FREQUENCY DATA; HIGHER FREQUENCIES; OUTPUT CONDUCTANCE; PARASITIC RESISTANCES; S-PARAMETER MEASUREMENTS; SMALL SIGNAL MODEL;

MOSFET DEVICES;

EID: 84934269440     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMFEDK.2004.1566433     Document Type: Conference Paper

References (4)

1. D. Lovelace et al., IEEE MTT-S Int. Microwave Symp. Dig., p. 865, 1994.
2. S. Lee, Microwave and Optical technology Lett., vol. 39, no. 4, p. 344, 2003.
3. S. Lee et al, IEEE Microwave and Guided Wave Lett., vol. 7, no. 3, p. 75, 1997.
4. S. C. Wang et al, Proc NSTI Nanotechnology Conf. & Trade Show, p. 151, 2004.