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A novel approach to extracting small-signal model parameters of silicon MOSFETs
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Direct extraction of the series equivalent circuit parameters for the small-signal model of SOI MOSFETs
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Unique extraction of substrate parameters of common-source MOSFETs
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Accurate high-frequency equivalent circuit modeling of silicon MOSFETs
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Electron Lett
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Characteristics of deep-submicrometer MOSFET and its empirical nonlinear RF model
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A small-signal RF model and its parameter extraction for substrate effects in RF MOSFETs
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S. Lee, C.S. Kim, and H.K. Yu, A small-signal RF model and its parameter extraction for substrate effects in RF MOSFETs, IEEE Trans Electron Dev 48 (2001) 1374-1379.
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On the high-frequency characteristics of substrate resistance in RF MOSFETs
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0033079483
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Effects of pad and interconnection parasitics on forward transit time in HBTs
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S. Lee, Effects of pad and interconnection parasitics on forward transit time in HBTs, IEEE Trans Electron Devices 46 (1999), 275-280.
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