Finding the asymmetric parasitic source and drain resistances from the A.C. Conductances of a single MOS transistor

Solid-State Electronics

Volumn 39, Issue 6, 1996, Pages 909-913

  Raychaudhuri, A ^a   Deen, M J ^a   King, M I H ^b   Kolk, J ^b  

^a SIMON FRASER UNIVERSITY   (Canada)

^b NORTEL NETWORKS   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ELECTRIC VARIABLES MEASUREMENT; GATES (TRANSISTOR); HOT CARRIERS; NUMERICAL METHODS;

DRAIN RESISTANCES; PARASITIC RESISTANCES; SINGLE SHORT CHANNEL TRANSISTOR; STATIC RESISTANCES; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 0030172713     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00269-3     Document Type: Article

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