High DC power 325 nm emission deep UV LEDs over sapphire

Electronics Letters

Volumn 38, Issue 25, 2002, Pages 1709-1711

  Chitnis, A ^a   Adivarahan, V ^a   Zhang, J P ^a   Wu, S ^a   Sun, J ^a   Pachipulusu, R ^a   Mandavilli, V ^a   Gaevski, M ^a   Shatalov, M ^a   Asif Khan, M ^a  

^a University of South Carolina   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT CONTROL; FLIP CHIP DEVICES; POWER CONTROL; SAPPHIRE; THERMAL CONDUCTIVITY; ULTRAVIOLET DEVICES;

HIGH POWER LIGHT EMITTING DIODES; PULSED PUMP CURRENTS;

LIGHT EMITTING DIODES;

EID: 0037028310     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20021100     Document Type: Article

References (7)

1. NISHIDA, T., SAITO, H., and KOBAYASHI, N.: 'Milliwatt operation of AlGaN-based single-quantum-well light emitting diode in the ultraviolet region', Appl. Phys. Lett., 78, (25), pp. 3927-3928
2. NISHIDA, T., SAITO, H., and KOBAYASHI, N.: 'Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN', Appl. Phys. Lett., 2001, 79, (6), pp. 711-712
3. ADIVARAHAN, V., CHITNIS, A., ZHANG, J.P., SHANTALOV, M., YANG, J.W., SIMIN, G., ASIF KHAN, M., SHUR, M., and GASKA, R.: 'Ultraviolet light emitting diodes at 340 nanometers using quaternary AlInGaN multiple quantum wells', Appl. Phys. Lett., 2001, 79, (25), pp. 4240-4242
4. CHITNIS, A., ZHANG, J.P., ADIVARAHAN, V., SHUAI, W., SUN, J., SHATALOV, M., YANG, J.W., SIMIN, G., and ASIF KHAN, M.: '324 nm light emitting diodes with milliwatt powers', Jpn. J. Appl. Phys. 2, Lett., 2002, 41, (4B), pp. L450-L451
5. ADIVARAHAN, V., ZHANG, J., CHITNIS, A., SHUAI, W., SUN, J., PACHIPULUSU, R., SHATALOV, M., and ASIF KHAN, M.: 'Sub-milliwatt power III-N light emitting diodes at 285 nm', Jpn. J. Appl. Phys. 2, Lett., 2002, 41, (4B), pp. L435-L436
6. SHATALOV, M., SIMIN, G., ADIVARAHAN, V., CHITNIS, A., WU, S., PACHIPULUSU, R., SIMIN, K., ZHANG, J.P., YANG, J.W., and ASIF KHAN, M.: 'Lateral current crowding in deep UV light emitting diodes over sapphire substrates', Jpn. J. Appl. Phys. I, Regul. Pap. Short Notes Rev. Pap., 2002, 41, (8), pp. 5083-5087
7. CHITNIS, A. JASON, S., MANDAVILLI, V., PACHIPULUSU, R., WU, S., GAEVSKI, M., ADIVARAHAN, C., ZHANG, J.P., ASIF KHAN, M., SARUA, A., and KUBALL, M.: 'Self-heating effects at high pump currents in deep UV light emitting diodes at 325 nm', Appl. Phys. (to be published)