Evidence of correlation between dark spots and dislocations originating from substrate in light-emitting diodes

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 2, 2005, Pages 1004-1008

  Hobo, Kenji ^a   Sone, Hidetoshi ^a   Kato, Toshihiro ^a   Hirotani, Masumi ^a   Saka, Takashi ^b  

^a DAIDO STEEL CO LTD   (Japan)

^b DAIDO UNIVERSITY   (Japan)

Author keywords

Dark spot; Degradation; Dislocation; GaAs; Light emitting diode

Indexed keywords

DEGRADATION; EPITAXIAL GROWTH; ETCHING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIRRORS; SEMICONDUCTING GALLIUM ARSENIDE;

DARK SPOT; DEVICE DEGRADATION; DISLOCATION; EXPITAXIAL LAYERS;

LIGHT EMITTING DIODES;

EID: 17444385288     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.1004     Document Type: Article

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