GaN full-vertical p-i-n rectifiers employing AlGaN:Si conducting buffer layers on n-SiC substrates

Applied Physics Letters

Volumn 88, Issue 19, 2006, Pages

  Yoo, D ^a,b   Limb, J ^a   Ryou, J H ^a   Lee, W ^a   Dupuis, R D ^a,b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Center for Organic Photonics and Electronics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

N-SIC SUBSTRATES; P-I-N RECTIFIERS; REVERSE BREAKDOWN VOLTAGE;

CHEMICAL VAPOR DEPOSITION; ELECTRIC BREAKDOWN; ELECTRIC PROPERTIES; GALLIUM NITRIDE; SILICON CARBIDE; SUBSTRATES;

ELECTRIC RECTIFIERS;

EID: 33646688855     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2201554     Document Type: Article

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