Optical bleaching effect in InN epitaxial layers

Applied Physics Letters

Volumn 88, Issue 19, 2006, Pages

  Pacebutas V ^a   Aleksejenko, G ^a   Krotkus, A ^a   Ager, J W ^b   Walukiewicz, W ^b   Lu, Hai ^c   Schaff, William J ^c  

^a CENTER FOR PHYSICAL SCIENCES AND TECHNOLOGY   (Lithuania)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c School of Operations Research and Industrial Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BLEACHING RECOVERY; ELECTRON LIFETIMES; OPTICAL BLEACHING;

CARRIER CONCENTRATION; ENERGY GAP; EPITAXIAL GROWTH; OPACITY; SPECTRUM ANALYSIS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 33646688168     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2202117     Document Type: Article

References (18)

1. H. Lu, W. J. Schaff, J. Hwang, H. Wu, G. Koley, and L. F. Eastman, Appl. Phys. Lett. 79, 1489 (2001).
2. V. Yu. Davydov, A. A. Klochikhin, R. P. Seisyan, V. V. Emtsev, S. V. Ivanov, F. Bechstedt, J. Furthmuller, H. Harima, A. V. Mudryi, J. Aderhold, O. Semchinova, and J. Graul, Phys. Status Solidi B 229, R1 (2002).
3. J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager III, E. E. Haller, Hai Lu, W. J. Schaff, Y. Saito, and Y. Nanishi, Appl. Phys. Lett. 80, 3967 (2002).
4. K. M. Yu, Z. Liliental-Weber, W. Walukiewicz, S. X. Li, R. E. Jones, W. Shan, J. W. Ager III, E. E. Haller, H. Lu, and W. J. Schaff, Appl. Phys. Lett. 86, 71910 (2005), and references therein.
5. T. L. Tansley and C. P. Foley, J. Appl. Phys. 59, 3241 (1986).
6. T. V. Shubina, S. V. Ivanov, V. N. Jmerik, D. D. Solnyshkov, V. A. Vekshin, P. S. Kop'ev, A. Vasson, J. Leymarie, A. Kavokin, H. Amano, K. Shimono, A. Kasic, and B. Monemar, Phys. Rev. Lett. 92, 117407 (2004).
7. P. Specht, J. C. Ho, X. Xu, R. Armitage, E. R. Weber, R. Erni, and C. Kisielowski, Solid State Commun. 135, 340 (2005).
8. J. Wu, W. Walukiewicz, W. Shan, K. M. Yu, J. W. Ager III, E. E. Haller, H. Lu, and W. J. Schaff, Phys. Rev. B 66, 201403 (2002).
9. S. X. Li, E. E. Haller, K. M. Yu, W. Walukiewicz, J. W. Ager III, J. Wu, W. Shan, H. Lu, and W. J. Schaff, e-print arXiv: cond-mat/0508140 (2005).
10. F. Chen, A. N. Cartwright, H. Lu, and W. J. Schaff, Appl. Phys. Lett. 83, 4984 (2003).
11. M. Sheik-Bahae, A. A. Said, T. H. Wei, D. J. Hagan, and E. W. Van Stryland, IEEE J. Quantum Electron. 26, 760 (1990).
12. S. S. Prabhu, S. E. Ralph, M. R. Meloch, and E. S. Harmon, Appl. Phys. Lett. 70, 2419 (1997).
13. F. Chen, A. N. Cartwright, H. Lu, and W. J. Schaff, J. Cryst. Growth 269, 10 (2004).
14. R. Adomavičius, G. Molis, A. Krotkus, and V. Sirutkaitis, Appl. Phys. Lett. 87, 261101 (2005).
15. A. M. Malyarevich, V. G. Savitski, P. V. Prokoshin, N. N. Posnov, K. V. Yumashev, E. Raaben, and A. A. Zhilin, J. Opt. Soc. Am. A 19, 28 (2002).
16. S. Y. Set, H. Yaguchi, Y. Tanaka, and M. Jablonski, J. Lightwave Technol. 22, 51 (2004).
17. V. Yu. Davydov, V. V. Emtsev, I. N. Goncharuk, A. N. Smirnov, V. D. Petrikov, V. V. Mamutin, V. A. Vekshin, S. V. Ivanov, M. B. Smirnov, and T. Inushima, Appl. Phys. Lett. 75, 3297 (1999).
18. J. W. Pomeroy, M. Kuball, H. Lu, W. J. Schaff, X. Wang, and A. Yoshikawa, Appl. Phys. Lett. 86, 22350 (2005).