Synthesis of nanoporous GaN crystalline particles by chemical vapor deposition

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6121, Issue , 2006, Pages

  Carvajal, Joan J ^a   Gomez, Nadia ^a   Bai, Jie ^a   Dudley, Michael ^a   Carlos Rojo, J ^a  

^a Stony Brook University   (United States)

Author keywords

Chemical vapor deposition; GaN; Nanoporous semiconductors; SEM; TEM; Wide band gap semiconductors

Indexed keywords

NANOPOROUS MORPHOLOGIES; NANOPOROUS SEMICONDUCTORS; WIDE BAND-GAP SEMICONDUCTORS;

CHEMICAL VAPOR DEPOSITION; GALLIUM NITRIDE; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY; SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY;

CRYSTALLINE MATERIALS;

EID: 33646671514     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.656389     Document Type: Conference Paper

References (26)

1. P.M.M.C. Bressers, J.W.J. Knappen, E.A. Meulenkamp, J.J. Kelly, "Visible light emission from a porous silicon / solution diode", Appl. Phys. Lett. 61, 108-110, 1992.
2. X. Li, Y.W. Kim, P.W. Bohn, I. Adesida, "In-plane bandgap control in porous GaN through electroless wet chemical etching", Appl. Phys. Lett., 80, 980-982, 2002.
3. M. Mynbaeva, A. Totkov, A. Kryzhanovski, I. Kotousova, A.S. Zubrilov, V.V. Ratnikov, V.Y. Davidov, N.I. Kuznetsov, K. Mynbaev, D.V. Tsvetkov, S. Stepanov, A. Cherenkov, V.A. Dmitriev, "Strain relaxation in GaN layers grown on porous GaN sublayers", MRS Internet J. Nitride Semicond. Res. 4, 14 (1-5), 1999.
4. Y. Oshima, T. Eri, M. Shibata, H. Sunakawa, A. Usui, "Fabrication of freestanding GaN wafers by hydride vapor-phase epitaxy with void-assisted separation", Phys. Stat. Sol. (A), 194, 554-558,2002.
5. M. Mynbaeva, N. Bazhenov, K. M. Evstropov, S.E. Saddow, Y. Koshka, Y. Melnik, "Photoconductivity in porous GaN layers", Phys. Stat. Sol. (B), 228, 589-592, 2001.
6. C. Wood, R. Feenstra, Nanoporous SiC and GaN, Defense University Research Initiative on Nanotechnology (DURINT) 2001
7. K. Maeda, T. Takata, M. Hara, N. Saito, Y. Inove, H. Kobayashi, K. Domen, "GaN:ZnO solid solution as a photocatalyst for visible-light-driven overall water splitting", J. Am. Chem. Soc., 127, 8286-8287, 2005.
8. I.M. Tiginyanu, I.V. Kravetsky, J. Monecke, W. Cordts, G. Marowsky, H.L. Hartnagel, "Semiconductor sieves as nonlinear optical materials", Appl. Phys. Lett. 77, 2415-2417, 2000.
9. D.J. Diaz, T.L. Williamson, I. Adesida, P.W. Bohn, R.J. Molnar, "Morphology evolution and luminescence properties of porous GaN generated via Pt-assisted electroless etching of hydride vapor phase epitaxy GaN on sapphire", J. Appl. Phys., 94, 7526-7534, 2003.
10. R.S. Qhalid Fareed, V. Adivarahan, C.Q. Chen, S. Rai, E. Kuokstis, J.W. Yang, M.A. Khan, J. Caissie, R.J. Molnar, "Air-bridged lateral growth of crack-free Al0.24Ga0.76N on highly relaxed porous GaN", Appl. Phys. Lett., 84, 696-698, 2004.
11. M. Mynbaeva, A. Titkov, A. Kryganovskii, V. Ratnikov, K. Mynbaev, H. Huhtinen, R. Laiho, V. Dmitriev, "Structural characterization and strain relaxation in porous GaN layers", Appl. Phys. Lett., 76, 1113-1115, 2000.
12. A. Pakes, P. Skeldon, G.E. Thompson, J.W. Fraser, S. Moisa, G.I. Sproule, M.J. Graham, S.B. Newcomb, "Anodic oxidation of gallium nitride", J. Mater. Sci., 38, 343-349, 2003.
13. Y.D. Wang, S.J. Chua, M.S. Sander, P. Chen, S. Tripathy, C.G. Fonstad, "Fabrication and properties of nanoporous GaN films", Appl. Phys. Lett., 85, 816-818, 2004.
14. S. Guha, N.A. Bojarczuk, D.W. Kisker, "Surface lifetimes of Ga and growth behaviour on GaN (0001) surfaces during molecular beam epitaxy" Appl. Phys. Lett., 69, 2879-2881, 1996.
15. B.K. Ghosh, T. Tanikawa, A. Hashimoto, A. Yamamoto, Y. Ito, "Reduced-stress GaN epitaxial layers grown on Si(111) by using a porous GaN interlayer converted from GaAs", J. Crystal Growth, 249,422-428,2003.
16. G. Chaplais, K. Schlichte, O. Stark, R.A. Fischer, S. Kaskel, "Template assisted design of microporous gallium nitride materials", Chem. Commun., 730-731, 2003.
17. G. Chaplais, S. Kaskel, "Porosity control in pre-ceramic molecular precursor-derived GaN based materials", J. Mater. Chem., 14, 1017-1025, 2004.
18. S.Y. Bae, H.W. Seo, J. Park, H. Yang, B. Kim, "Porous GaN nanowires synthesized using thermal chemical vapor deposition", Chem. Phys. Lett., 376, 445-451, 2003.
19. S.O. Kucheyev, J.S. Williams, C. Jagadish, J. Zou, V.S.J. Craig, G. Li, "Ion-beam-induced porosity of GaN", Appl. Phys. Lett. 77, 1455-1457, 2000.
20. T.L. Williamson, D.J. Diaz, P.W. Bohn, R.J. Molnar, "Structure- property relationships in porous GaN generated by Pt-assisted electroless etching studied by Raman spectroscopy", J. Vac. Sci. Technol. B, 22, 925-931, 2004.
21. E. Dowty, Shape for Windows, Version 5.0.1, Shape software, Kingsport, 1995.
22. C.C. Chen, C.C. Yeh, C.H. Chen, M.Y. Yu, H.L. Liu, J.J. Wu, K.H. Chen, L.C. Chen, J.Y. Peng, Y.F. Chen, "Catalytic growth and characterization of gallium nitride nanowires", J. Am. Chem. Soc., 123, 2791-2798, 2001.
23. H. Yamane, M. Shimada, T. Sekiguchi, F.J. DiSalvo, "Morphology and characterization of GaN single crystals grown in a Na flux", J. Cryst. Growth, 186, 8-12, 1998.
24. M. He, I. Minus, P. Zhou, S.N. Mohammed, J.B. Halpern, R. Jacobs, W.L. Sarney, L. Salamanca-Riba, R.D. Vispute, "Growth of large-scale GaN nanowires and tubes by direct reaction of Ga with NH3", Appl. Phys. Lett., 77, 3731-3733, 2000.
25. J. Goldberger, R. He, Y. Zhang, S. Lee, H. Yan, H.J. Choi, P. Yang, "Single-crystal gallium nitride nanotubes", Nature, 422, 599-602, 2003.
26. S.Y. Bae, H.W. Seo, J. Park, H. Yang, J.C. Park, S.Y. Lee, "Single-crystalline gallium nitride nanobelts", Appl. Phys. Lett., 81, 126-128, 2002.