Strain relaxation in GaN layers grown on porous GaN sublayers

MRS Internet Journal of Nitride Semiconductor Research

Volumn 4, Issue , 1999, Pages

  Mynbaeva, M ^a   Titkov, A ^a   Kryzhanovski, A ^a   Kotousova, I ^a   Zubrilov, A S ^a   Ratnikov, V V ^a   Davydov, V Yu ^a   Kuznetsov, N I ^a   Mynbaev, K ^a   Tsvetkov, D V ^b   Stepanov, S ^b   Cherenkov, A ^b   Dmitriev, V A ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b Crystal Growth Research Center   (Russian Federation)

^c Technol Devices International Inc

Author keywords

[No Author keywords available]

Indexed keywords

MORPHOLOGY; PHOTOLUMINESCENCE; RESIDUAL STRESSES; SEMICONDUCTING FILMS; SILICON CARBIDE; SINGLE CRYSTALS; STRAIN; THERMAL EXPANSION; VAPOR PHASE EPITAXY;

EPITAXIAL LAYERS; HIGH CRYSTALLINE QUALITY; SUBLAYERS;

GALLIUM NITRIDE;

EID: 3442895135     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/S1092578300000703     Document Type: Article

References (13)

1. V.Bondarenko, L.Dolgyi, N.Vorozov, V.Yakovtseva, V.Levchenko, L.Postnova, Perspectives, science and technologies for novel silicon on insulator devices, NATO Advanced Research Workshop, Conf. Abstracts p.p. 15-16, (1998), Kiev, Ukraine
2. S. Konaka, M. Tabe, T. Sakai, Appl. Phys. Lett. 41, 86-88 (1982).
3. Y. Kao, K. Wang, B. Wu, T. Lin, C. Nien, D. Jamieson, G. Bai, Appl. Phys. Lett. 51, 1809-1811 (1987).
4. YuV Melnik, IP Nikitina, AS Zubrilov, AA Sitnikova, YuG Musikhin, VA Dmitriev, Inst. Phys. Conf. Ser. 142, 863-866 (1996).
5. V. Dmitriev, K. Irvine, G. Bulman, J. Edmond, A. Zubrilov, V. Nikolaev, I. Nikitina, D. Tsvetkov, A. Babanin, A. Sitnikova, Yu. Musikhin, N. Bert, J. Cryst. Growth 166, 601-606 (1996).
6. M. Mynbaeva, D. Tsvetkov, Inst. Phys. Conf. Ser. 155, 365-368 (1997).
7. A. Usikov, V.V. Ratnikov, R. Kyutt, W. V. Lundin, B. Pushnyi, N. M. Shmidt, M.P. Scheglov, MRS Internet J. Nitride Semicond. Res. 3, 42 (1998).
8. G. Rozgonyi, P. Petroff, M. Panish, J. Cryst. Growth 27, 106-117 (1974).
9. P. Fewster, N. Andrew, Appl. Cryst. 28, 451 (1995).
10. M. Leszczynski, T. Suski, P. Perlin, M. Teisseyre, J. Grzegory, M. Bockowski, Yun, S. Porowski, J. Major, J. Phys. D 28, A149-A153 (1995).
11. Yu.V. Melnik, K.V. Vassilevski, I.P. Nikitina, A.I. Babanin, V. Yu. Davydov, V.A. Dmitriev, MRS Internet J. Nitride Semicond. Res. 2, 39 (1997).
12. V. Davydov, N. Averkiev, I. Goncharuk, D. Nelson, I. Nikitina, A. Polkovnikov, A. Smirnov, M. Jacobson, O. Semchinova, J. Appl. Phys. 82, 5097 (1997).
13. W Rieger, T Metzger, H Angerer, R Dimitrov, O Ambacher, M Stutzmann, Appl. Phys. Lett. 68, 970 (1996).