Epitaxial growth of SiC from Al-Si solution reacting with propane gas

Journal of Crystal Growth

Volumn 269, Issue 2-4, 2004, Pages 413-418

  Tanaka, A ^a   Ataka, T ^a   Ohkura, E ^a   Katsuno, H ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

A1. Crystal morphology; A3. Liquid phase epitaxy; B2. Semiconducting silicon compounds

Indexed keywords

CRYSTAL MORPHOLOGY; SOLUTION GROWTH; SURFACE DIFFUSION;

CRYSTAL STRUCTURE; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING SILICON COMPOUNDS; SOLID SOLUTIONS; SOLUBILITY; SOLUTIONS;

LIQUID PHASE EPITAXY;

EID: 4344670228     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.05.075     Document Type: Article

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