Oxygen diffusion barriers for high-density FeRAMs

Integrated Ferroelectrics

Volumn 47, Issue , 2002, Pages 79-88

  Moon, B K ^a   Pinnow, C U ^a   Imai, K ^b   Arisumi, O ^b   Itokawa, H ^b   Hornik, K ^a   Tsutsumi, K ^b   Hilliger, A ^a   Kunishima, I ^b   Nagel, N ^a   Yamakawa, K ^b   Beitel, G ^a  

^a Infineon Technologies Japan KK   (Japan)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

Capacitor over plug; FeRAM; Hysteresis; lr; lrO2; Oxygen barrier; PZT; Rapid thermal annealing; RTO; Sputter

Indexed keywords

ANNEALING; DIFFUSION; HYSTERESIS; IRIDIUM COMPOUNDS; OXIDATION; RANDOM ACCESS STORAGE; RAPID THERMAL ANNEALING; STOICHIOMETRY;

CAPACITOR OVER PLUG (COP); FERAM; IRO2; OXYGEN BARRIER; PZT; SPUTTER;

FERROELECTRIC DEVICES;

EID: 33646517550     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580215412     Document Type: Article

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