Effect of surface states on carrier dynamics in InGaAsP/InP stressor quantum dots

Nanotechnology

Volumn 17, Issue 9, 2006, Pages 2181-2186

  Riikonen, J ^a   Sormunen, J ^a   Koskenvaara, H ^a   Mattila, M ^a   Aierken, A ^a   Hakkarainen, T ^a   Sopanen, M ^a   Lipsanen, H ^a  

^a AALTO UNIVERSITY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

CAPTURE TIME CONSTANT; RATE EQUATION ANALYSES; SURFACE STATES; TWO-PHASE DECAY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33646187729     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/9/017     Document Type: Article

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