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Physical Review B - Condensed Matter and Materials Physics

Volumn 62, Issue 20, 2000, Pages 13588-13594

Carrier capture processes in strain-induced InxGa1-xAs/GaAs quantum dot structures

(12) Lingk, C a Helfer, W a Von Plessen, G a Feldmann, J a Stock, K b Feise, M W c Citrin, D S c Lipsanen, H d Sopanen, M d Virkkala, R d Tulkki, J d Ahopelto, J e

a UNIVERSITY OF MUNICH (Germany)

b WALTER SCHOTTKY INSTITUT (Germany)

c WASHINGTON STATE UNIVERSITY (United States)

d AALTO UNIVERSITY (Finland)

e VTT TECHNICAL RESEARCH CENTRE OF FINLAND (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY;

ARTICLE; ATOMIC FORCE MICROSCOPY; LUMINESCENCE; MAGNETIC FIELD; PHASE TRANSITION; SEMICONDUCTOR; SPECTROSCOPY; STRESS STRAIN RELATIONSHIP; SURFACE PROPERTY; THICKNESS;

EID: 0034668549 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.62.13588 Document Type: Article

Times cited : (9)

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