Experimental and theoretical study of strain-induced AIGaAs/GaAs quantum dots using a self-organized GaSb island as a stressor

Journal of Applied Physics

Volumn 86, Issue 4, 1999, Pages 2001-2007

  Wang, T ^a,b   Forchel, A ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

^b UNIVERSITY OF TOKUSHIMA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; CRYSTAL LATTICES; ELASTICITY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SHEAR STRESS; STRAIN; WETTING;

SELF-ORGANIZED STRESSORS; STRAIN-INDUCED QUANTUM DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032615337     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371000     Document Type: Article

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