Modified self-assembly of InAs islands acting as stressors for strain-induced InGaAs(P)/InP quantum dots

Nanotechnology

Volumn 16, Issue 9, 2005, Pages 1630-1635

  Sormunen, J ^a   Riikonen, J ^a   Mattila, M ^a   Sopanen, M ^a   Lipsanen, H ^a  

^a AALTO UNIVERSITY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHARACTERIZATION; ELECTRON TUNNELING; SELF ASSEMBLY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

AREAL DENSITY; INHOMOGENEITY; RESONANT TUNNELING STRUCTURES; STRESSORS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 23444438177     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/16/9/038     Document Type: Article

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