Highly tunable emission from strain-induced InGaAsP/InP quantum dots

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 28-32, 2005, Pages

  Riikonen, Juha ^a   Sormunen, Jaakko ^a   Koskenvaara, Hannu ^a   Mattila, Marco ^a   Sopanen, Markku ^a   Lipsanen, Harri ^a  

^a AALTO UNIVERSITY   (Finland)

Author keywords

InAs islands; Photoluminescence; Quantum dot; Self assembled growth; Stressors

Indexed keywords

INDIUM COMPOUNDS; LATTICE CONSTANTS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

INAS ISLANDS; SELF-ASSEMBLED GROWTH; STRESSORS;

PHOTOLUMINESCENCE;

EID: 30344465009     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.L976     Document Type: Article

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