메뉴 건너뛰기




Volumn 32, Issue 1-2 SPEC. ISS., 2006, Pages 77-80

Long wavelength InAs self-assembled quantum dots embedded in GaNAs strain-compensating layers

Author keywords

GaNAs; MBE; Quantum dots; Strain compensation

Indexed keywords

MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN;

EID: 33646175763     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2005.12.067     Document Type: Article
Times cited : (4)

References (15)
  • 3
    • 33646165077 scopus 로고    scopus 로고
    • Y. Okada, N. Shiotsuka, H. Komiyama, K. Akahane, N. Ohtani, 20th European Photovoltaic Solar Energy Conference and Exhibition, June 2005, 1AO.7.6.
  • 15
    • 33646188154 scopus 로고    scopus 로고
    • J.I. Pankove, Optical Process in Semiconductors, Dover, New York, 1971, p. 165.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.