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Volumn 32, Issue 1-2 SPEC. ISS., 2006, Pages 77-80
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Long wavelength InAs self-assembled quantum dots embedded in GaNAs strain-compensating layers
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Author keywords
GaNAs; MBE; Quantum dots; Strain compensation
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Indexed keywords
MOLECULAR BEAM EPITAXY;
OPTICAL PROPERTIES;
PHOTOLUMINESCENCE;
SELF ASSEMBLY;
SEMICONDUCTING INDIUM COMPOUNDS;
STRAIN;
GANAS;
NON-RADIATIVE DEFECTS;
STRAIN COMPENSATION;
WAVELENGTH EMISSION;
SEMICONDUCTOR QUANTUM DOTS;
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EID: 33646175763
PISSN: 13869477
EISSN: None
Source Type: Journal
DOI: 10.1016/j.physe.2005.12.067 Document Type: Article |
Times cited : (4)
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References (15)
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