Fabrication of self-organized GaInNAs quantum dots by atomic H-assisted RF-molecular beam epitaxy

Journal of Crystal Growth

Volumn 261, Issue 1, 2004, Pages 11-15

  Oshima, Ryuji ^a   Ohmae, Akira ^a   Okada, Yoshitaka ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

A1. Low dimensional structures; A3. Molecular beam epitaxy; B2. Semiconducting III V materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; HYDROGEN; IRRADIATION; MOLECULAR BEAM EPITAXY; NITROGEN; PHOTOLUMINESCENCE; PLASMA SOURCES; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SURFACE ACTIVE AGENTS; SURFACE PHENOMENA; X RAY DIFFRACTION ANALYSIS;

CRYSTAL QUALITY; LATTICE MISMATCH; LOW DIMENSIONAL STRUCTURES;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0344308277     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2003.09.032     Document Type: Article

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